
N-channel single power MOSFET designed for switching applications. Features a 100V drain-source breakdown voltage and a maximum continuous drain current of 20A, with a pulsed drain current capability of 80A. Offers a low on-resistance of 30mΩ. Housed in a rectangular LFPAK package with gull-wing terminals for surface mounting. Operates up to 150°C and is RoHS compliant.
Renesas HAT2174H-EL-E technical specifications.
Download the complete datasheet for Renesas HAT2174H-EL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
