N-channel single power MOSFET designed for switching applications. Features a 60V drain-source breakdown voltage and a maximum continuous drain current of 3A, with a pulsed drain current capability of 12A. Offers a maximum on-resistance of 183mΩ. Packaged in a CMFPAK6 (R-PDSO-F6) rectangular plastic surface-mount package with tin-plated flat terminals. Operates up to 150°C with a peak reflow temperature of 260°C for 20 seconds. RoHS compliant.
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Technical Specifications
Renesas HAT2217C-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
3A
Drain Current-Max (ID)
3A
Drain-source On Resistance-Max
183mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F6
JESD-609 Code
e6
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1.25W
Pulsed Drain Current-Max (IDM)
12A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2217C-EL-E Datasheet
Download the complete datasheet for Renesas HAT2217C-EL-E to view detailed technical specifications.
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