N-channel MOSFET with 80V drain-source breakdown voltage and 30A continuous drain current. Features low 15.5mR maximum drain-source on-resistance and 120A pulsed drain current capability. Designed for switching applications, this silicon MOSFET operates up to 150°C with a maximum power dissipation of 25W. It is a surface-mount component in a rectangular, small outline plastic package with nickel terminal finish.
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Technical Specifications
Renesas HAT2244WP-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
30A
Drain Current-Max (ID)
30A
Drain-source On Resistance-Max
15.5mR
DS Breakdown Voltage-Min
80V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e4
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25W
Pulsed Drain Current-Max (IDM)
120A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Nickel
Terminal Form
No Lead
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2244WP-EL-E Datasheet
Download the complete datasheet for Renesas HAT2244WP-EL-E to view detailed technical specifications.
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