The HIP2100EIBZ is an 8-channel half bridge based MOSFET driver from Renesas, operating within a temperature range of -40°C to 125°C. It has 8 terminals and a pin count of 8, with a supply voltage range of 9V to 14V. The device is packaged in a 8-pin R-PDSO-G8 package and is designed for automotive applications. It features a dual terminal position and a width of 3.9mm and length of 4.89mm.
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Technical Specifications
Renesas HIP2100EIBZ technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 8 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G8 |
| Width | 3.9 |
| Length | 4.89 |
| Pin Count | 8 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 12 |
| Supply Voltage-Min | 9 |
| Supply Voltage-Max | 14 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Renesas HIP2100EIBZ Datasheet
Download the complete datasheet for Renesas HIP2100EIBZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.