The HIP6601BECBZ is a half bridge based MOSFET driver from Renesas, operating within a temperature range of 0 to 85 degrees Celsius. It features 8 terminals and a dual terminal position. The device is supplied with a nominal voltage of 12V, with a minimum and maximum supply voltage of 10.8V and 13.2V, respectively. The HIP6601BECBZ is packaged in a SOIC-8 format, measuring 3.9mm in width and 4.89mm in length.
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Technical Specifications
Renesas HIP6601BECBZ technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 8 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G8 |
| Width | 3.9 |
| Length | 4.89 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom | 12 |
| Supply Voltage-Min | 10.8 |
| Supply Voltage-Max | 13.2 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Renesas HIP6601BECBZ Datasheet
Download the complete datasheet for Renesas HIP6601BECBZ to view detailed technical specifications.
No datasheet is available for this part.