36Mbit QDR SRAM IC, 200MHz clock frequency, 0.45ns access time. Features 2M x 18 organization, CMOS technology, and separate I/O. Operates from 1.7V to 1.9V supply, with a maximum operating temperature of 70°C. Surface mountable in a 165FBGA package. RoHS compliant.
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Technical Specifications
Renesas HM66AQB18202BP-50 technical specifications.
General
Access Time-Max
0.45ns
Clock Frequency-Max (fCLK)
200MHz
Density
37748736b
Height - Seated (Max)
1.46mm
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Length
17mm
Max Operating Temperature
70°C
Max Supply Current
620mA
Memory Type
QDR SRAM
Memory Width
18
Min Operating Temperature
0°C
Moisture Sensitivity Level
3
Number of Functions
1
Number of Words
2097152
Number of Words Code
2M
Organization
2MX18
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260°C
Power Supplies
1.5/1.8,1.8V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
280mA
Standby Voltage-Min
1.7V
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Time @ Peak Reflow Temperature-Max (s)
20s
Width
15mm
Compliance
RoHS
Compliant
Datasheet
Renesas HM66AQB18202BP-50 Datasheet
Download the complete datasheet for Renesas HM66AQB18202BP-50 to view detailed technical specifications.
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