32K x 8 Parallel EEPROM memory with 100ns access time. Features 262144 bits density, 5V supply voltage, and 10ms write cycle time. CMOS technology, DIP-28 package with through-hole mounting and 2.54mm terminal pitch. Supports data polling and toggle bit functionality, with 100,000 cycle endurance. Commercial temperature grade, RoHS compliant.
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Technical Specifications
Renesas HN58C256AP-10E technical specifications.
General
| Access Time-Max | 100ns |
| Command User Interface | No |
| Data Polling | Yes |
| Density | 262144b |
| Endurance | 100000Cycles |
| Height - Seated (Max) | 5.7mm |
| JESD-30 Code | R-PDIP-T28 |
| JESD-609 Code | e6 |
| Length | 35.6mm |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Supply Current | 30mA |
| Memory Type | EEPROM, |
| Memory Width | 8 |
| Moisture Sensitivity Level | 1 |
| Number of Functions | 1 |
| Number of Words | 32768 |
| Number of Words Code | 32K |
| Organization | 32KX8 |
| Package Body Material | Plastic |
| Package Code | DIP |
| Package Equivalence Code | DIP28,.6 |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Page Size | 64Words |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | 260°C |
| Power Supplies | 5V |
| Programming Voltage | 5V |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Standby Current-Max | 20uA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 4.5V |
| Supply Voltage-Nom (Vsup) | 5V |
| Surface Mount | No |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Pitch | 2.54mm |
| Terminal Position | DUAL |
| Toggle Bit | Yes |
| Width | 15.24mm |
| Write Cycle Time-Max (tWC) | 10ms |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HN58C256AP-10E Datasheet
Download the complete datasheet for Renesas HN58C256AP-10E to view detailed technical specifications.
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