262144-bit CMOS EEPROM memory, organized as 32K x 8 bits, offering an 85ns maximum access time. This parallel interface memory operates from a 4.5V to 5.5V supply voltage, with a nominal 5V requirement. Features include data polling and ready/busy signals, with a 10ms maximum write cycle time. The component is housed in a 32-lead, 0.5mm pitch TSSOP package, suitable for surface mounting and rated for commercial temperature operation (0°C to 70°C).
Quick Jump:
Technical Specifications
Renesas HN58C257AT-85E technical specifications.
General
Access Time-Max
85ns
Command User Interface
No
Data Polling
Yes
Density
262144b
Height - Seated (Max)
1.2mm
JESD-30 Code
R-PDSO-G32
Length
12.4mm
Max Operating Temperature
70°C
Memory Type
EEPROM,
Memory Width
8
Min Operating Temperature
0°C
Max Supply Current
30mA
Moisture Sensitivity Level
3
Number of Functions
1
Number of Words
32768
Number of Words Code
32K
Organization
32KX8
Package Body Material
Plastic
Package Code
TSSOP
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCHMeter
Page Size
64Words
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260°C
Power Supplies
5V
Programming Voltage
5V
Qualification Status
Not Qualified
Ready/Busy
Yes
RoHS Compliant
Yes
Standby Current-Max
20uA
Supply Voltage-Max (Vsup)
5.5V
Supply Voltage-Min (Vsup)
4.5V
Supply Voltage-Nom (Vsup)
5V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Gull Wing
Terminal Pitch
0.5mm
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Toggle Bit
Yes
Width
8mm
Write Cycle Time-Max (tWC)
10ms
Compliance
RoHS
Compliant
Datasheet
Renesas HN58C257AT-85E Datasheet
Download the complete datasheet for Renesas HN58C257AT-85E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.