128K x 8 EEPROM memory IC, featuring 250ns maximum access time and 10-year data retention. This CMOS device operates from a 3V to 5.5V supply, with a nominal 3V supply voltage and 3V programming voltage. It supports data polling and a toggle bit for status indication, housed in a 32-pin TSOP package with gull-wing terminals. Maximum operating temperature is 70°C, with a standby current of 20µA.
Quick Jump:
Technical Specifications
Renesas HN58V1001T-25 technical specifications.
General
| Access Time-Max | 250ns |
| Command User Interface | No |
| Data Polling | Yes |
| Data Retention Time-Min | 10 |
| Density | 1048576b |
| Height - Seated (Max) | 1.2mm |
| JESD-30 Code | R-PDSO-G32 |
| JESD-609 Code | e0 |
| Length | 12.4mm |
| Max Operating Temperature | 70°C |
| Max Supply Current | 15mA |
| Memory Type | EEPROM, |
| Memory Width | 8 |
| Min Operating Temperature | 0°C |
| Number of Functions | 1 |
| Number of Words | 131072 |
| Number of Words Code | 128K |
| Organization | 128KX8 |
| Package Body Material | Plastic |
| Package Code | TSOP1-R |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINE, THIN PROFILEMeter |
| Page Size | 128Words |
| Parallel/Serial | PARALLEL |
| Power Supplies | 3/5V |
| Programming Voltage | 3V |
| Qualification Status | Not Qualified |
| Ready/Busy | Yes |
| RoHS Compliant | No |
| Standby Current-Max | 20uA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Toggle Bit | Yes |
| Width | 8mm |
| Write Cycle Time-Max (tWC) | 15ms |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HN58V1001T-25 Datasheet
Download the complete datasheet for Renesas HN58V1001T-25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.