32K x 8 EEPROM memory IC, offering 262,144 bits of storage. Features a 120ns maximum access time and 10ms maximum write cycle time. Operates from a 3V to 5.5V supply voltage with a nominal 3V programming voltage. This CMOS technology component supports data polling and toggle bit functionality. Packaged in a 28-pin TSOP1 (R-PDSO-G28) with a 0.55mm terminal pitch, suitable for surface mounting. Endurance rated at 100,000 cycles with 10 years of data retention.
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Technical Specifications
Renesas HN58V256AT-12 technical specifications.
General
| Access Time-Max | 120ns |
| Command User Interface | No |
| Data Polling | Yes |
| Data Retention Time-Min | 10 |
| Density | 262144b |
| Endurance | 100000Cycles |
| Height - Seated (Max) | 1.2mm |
| JESD-30 Code | R-PDSO-G28 |
| JESD-609 Code | e0 |
| Length | 11.8mm |
| Max Operating Temperature | 70°C |
| Max Supply Current | 30mA |
| Memory Type | EEPROM, |
| Memory Width | 8 |
| Min Operating Temperature | 0°C |
| Number of Functions | 1 |
| Number of Words | 32768 |
| Number of Words Code | 32K |
| Organization | 32KX8 |
| Package Body Material | Plastic |
| Package Code | TSOP1 |
| Package Equivalence Code | TSSOP28,.53,22 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINE, THIN PROFILEMeter |
| Page Size | 64Words |
| Parallel/Serial | PARALLEL |
| Power Supplies | 3/5V |
| Programming Voltage | 3V |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Standby Current-Max | 20uA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.55mm |
| Terminal Position | DUAL |
| Toggle Bit | Yes |
| Width | 8mm |
| Write Cycle Time-Max (tWC) | 10ms |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HN58V256AT-12 Datasheet
Download the complete datasheet for Renesas HN58V256AT-12 to view detailed technical specifications.
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