262144-bit CMOS EEPROM memory, organized as 32K words by 8 bits, offering a 120ns maximum access time. This parallel interface memory operates from a 2.7V to 5.5V supply voltage, with a nominal 3V programming voltage. Packaged in a 28-lead TSOP-1 (R-PDSO-G28) with gull-wing terminals and a 0.55mm pitch, it features a thin profile (1.2mm seated height) and operates across an industrial temperature range of -40°C to 85°C.
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Technical Specifications
Renesas HN58V256ATI-12 technical specifications.
General
| Access Time-Max | 120ns |
| Density | 262144b |
| Height - Seated (Max) | 1.2mm |
| JESD-30 Code | R-PDSO-G28 |
| JESD-609 Code | e0 |
| Length | 11.8mm |
| Max Operating Temperature | 85°C |
| Memory Type | EEPROM, |
| Memory Width | 8 |
| Min Operating Temperature | -40°C |
| Number of Functions | 1 |
| Number of Words | 32768 |
| Number of Words Code | 32K |
| Organization | 32KX8 |
| Package Body Material | Plastic |
| Package Code | TSOP1 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINE, THIN PROFILEMeter |
| Parallel/Serial | PARALLEL |
| Programming Voltage | 3V |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.55mm |
| Terminal Position | DUAL |
| Width | 8mm |
| Write Cycle Time-Max (tWC) | 10ms |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HN58V256ATI-12 Datasheet
Download the complete datasheet for Renesas HN58V256ATI-12 to view detailed technical specifications.
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