8K x 8 EEPROM memory IC, featuring 100ns maximum access time and 3V programming voltage. This parallel interface memory operates from a 2.7V to 5.5V supply, with a nominal 3.3V. The CMOS technology component offers 10 years of data retention and includes data polling and toggle bit functionality. Packaged in a 28-pin plastic DIP with a 2.54mm terminal pitch, it has a maximum operating temperature of 70°C.
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Technical Specifications
Renesas HN58V65AP-10 technical specifications.
General
| Access Time-Max | 100ns |
| Command User Interface | No |
| Data Polling | Yes |
| Data Retention Time-Min | 10 |
| Density | 65536b |
| Height - Seated (Max) | 5.7mm |
| JESD-30 Code | R-PDIP-T28 |
| JESD-609 Code | e0 |
| Length | 35.6mm |
| Max Operating Temperature | 70°C |
| Max Supply Current | 25mA |
| Memory Type | EEPROM, |
| Memory Width | 8 |
| Min Operating Temperature | 0°C |
| Number of Functions | 1 |
| Number of Words | 8192 |
| Number of Words Code | 8K |
| Organization | 8KX8 |
| Package Body Material | Plastic |
| Package Code | DIP |
| Package Equivalence Code | DIP28,.6 |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Page Size | 64Words |
| Parallel/Serial | PARALLEL |
| Power Supplies | 3/5V |
| Programming Voltage | 3V |
| Qualification Status | Not Qualified |
| Ready/Busy | Yes |
| RoHS Compliant | No |
| Standby Current-Max | 5uA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3.3V |
| Surface Mount | No |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Pitch | 2.54mm |
| Terminal Position | DUAL |
| Toggle Bit | Yes |
| Width | 15.24mm |
| Write Cycle Time-Max (tWC) | 10ms |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HN58V65AP-10 Datasheet
Download the complete datasheet for Renesas HN58V65AP-10 to view detailed technical specifications.
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