The HR1A4M-T1-AZ is a single PNP transistor with a minimum DC current gain of 50 and a maximum collector current of 1A. It has a maximum power dissipation of 2W and is manufactured using SILICON material. This transistor is compliant with RoHS and SVHC regulations and is designed for surface mount applications.
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Technical Specifications
Renesas HR1A4M-T1-AZ technical specifications.
General
| DC Current Gain-Min (hFE) | 50 |
| Max Collector Current | 1A |
| Number of Elements | 1 |
| Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 2W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HR1A4M-T1-AZ Datasheet
Download the complete datasheet for Renesas HR1A4M-T1-AZ to view detailed technical specifications.
No datasheet is available for this part.