High-frequency PIN diode for attenuator applications. Features a minimum breakdown voltage of 60V and a maximum forward resistance of 5.5 Ohms. Diode capacitance is a maximum of 2.4pF. This silicon diode is surface mountable in a small outline rectangular package, rated for 100mW maximum power dissipation and a peak reflow temperature of 260°C for 20 seconds. RoHS compliant.
Quick Jump:
Technical Specifications
Renesas HVU187TRF-E technical specifications.
General
| Application(s) | ATTENUATOR |
| Diode Capacitance-Max | 2.4pF |
| Diode Element Material | SILICON |
| Diode Forward Resistance-Max | 5.5R |
| Diode Type | PIN |
| Frequency Band | HIGH FREQUENCY |
| JESD-30 Code | R-PDSO-G2 |
| JESD-609 Code | e6 |
| Min Breakdown Voltage | 60V |
| Max Power Dissipation | 100mW |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HVU187TRF-E Datasheet
Download the complete datasheet for Renesas HVU187TRF-E to view detailed technical specifications.
No datasheet is available for this part.