The HZS3.9NB1 is a unidirectional silicon zener diode with a maximum operating temperature of 200°C and a maximum power dissipation of 0.4W. It has a DO-34 package with 2 pins and an axial terminal position. The diode element is made of silicon and has a pin count of 2. It is suitable for use in high-temperature applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Renesas HZS3.9NB1 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-34 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Renesas HZS3.9NB1 Datasheet
Download the complete datasheet for Renesas HZS3.9NB1 to view detailed technical specifications.
No datasheet is available for this part.