P-channel enhancement mode power MOSFET in a 3-pin SOT-23F surface-mount package. Features a maximum drain-source voltage of 12V and a continuous drain current of 3.5A. Offers a low drain-source on-resistance of 44mOhm at 4.5V gate-source voltage. Typical gate charge is 8.3nC at 4.5V, with input capacitance of 720pF at 10V drain-source voltage. Maximum power dissipation is 1300mW, operating across a temperature range of -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Renesas N0100P-T1-AT technical specifications.
General
Package/Case
SOT-23F
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
2
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
12V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
3.5A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
720@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas N0100P-T1-AT Datasheet
Download the complete datasheet for Renesas N0100P-T1-AT to view detailed technical specifications.
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