PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 3-pin SOT-23F plastic package with flat leads. Offers a maximum collector-emitter voltage of 25V and a continuous collector current of 1A. Maximum power dissipation is 1000mW. Minimum DC current gain is 90 at 100mA and 1V. Operating temperature range is -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Renesas N0201RDM technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | SOT-23F |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2 |
| Package Height (mm) | 0.88(Max) |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 25V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 90@100mA@1V |
| Maximum Transition Frequency | 90(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Renesas N0201RDM Datasheet
Download the complete datasheet for Renesas N0201RDM to view detailed technical specifications.
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