PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 2A continuous collector current. Packaged in a 3-pin SOT-23F with flat leads, offering a compact 2.9mm x 2mm footprint. Maximum power dissipation is 1000mW, with a minimum DC current gain of 300 at 100mA and 2V. Operates across a temperature range of -55°C to 150°C.
Renesas N0202RZK technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | SOT-23F |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2 |
| Package Height (mm) | 0.88(Max) |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 300@100mA@2V |
| Maximum Transition Frequency | 90(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Download the complete datasheet for Renesas N0202RZK to view detailed technical specifications.
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