P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 4.4A continuous drain current. This single transistor is housed in a compact SOT-23F surface-mount package with 3 pins, measuring 2.9mm in length, 2mm in width, and 0.85mm in height. Key specifications include a maximum gate-source voltage of ±20V, a low drain-source on-resistance of 54mΩ at 10V, and a typical gate charge of 14nC. It offers a maximum power dissipation of 1300mW and operates across a temperature range of -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas N0302P technical specifications.
General
| Package Family Name | SOT |
| Package/Case | SOT-23F |
| Package Description | Small Outline Transistor |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2 |
| Package Height (mm) | 0.85 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4.4A |
| Maximum Drain Source Resistance | 54@10VmOhm |
| Typical Gate Charge @ Vgs | 14@10VnC |
| Typical Gate Charge @ 10V | 14nC |
| Typical Input Capacitance @ Vds | 620@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas N0302P Datasheet
Download the complete datasheet for Renesas N0302P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.