P-channel enhancement mode power MOSFET in a 3-pin SOT-23F surface mount package. Features a maximum drain-source voltage of 30V and a continuous drain current of 4.4A. Offers a low drain-source on-resistance of 54mΩ at 10V. Operates across a temperature range of -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Renesas N0302P-T1-AT technical specifications.
General
Package Family Name
SOT
Package/Case
SOT-23F
Package Description
Small Outline Transistor
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
2
Package Height (mm)
0.85
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
4.4A
Maximum Drain Source Resistance
54@10VmOhm
Typical Gate Charge @ Vgs
14@10VnC
Typical Gate Charge @ 10V
14nC
Typical Input Capacitance @ Vds
620@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Renesas N0302P-T1-AT Datasheet
Download the complete datasheet for Renesas N0302P-T1-AT to view detailed technical specifications.
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