NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage, 1A continuous collector current, and 1000mW power dissipation. Packaged in a 3-pin SOT-23F with flat leads, measuring 2.9mm x 2mm x 0.88mm (max). Operates across a temperature range of -55°C to 150°C, with a minimum DC current gain of 81 at 1A/2V and a typical transition frequency of 150MHz.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Renesas N0501S-T1-AT technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
SOT-23F
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
2
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
1A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
81@1A@2V
Maximum Transition Frequency
150(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Renesas N0501S-T1-AT Datasheet
Download the complete datasheet for Renesas N0501S-T1-AT to view detailed technical specifications.
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