PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage and 1A continuous collector current. This single-element transistor is housed in a compact SOT-23F package with a 0.95mm pin pitch. Maximum power dissipation is 1000mW, with a typical transition frequency of 80MHz. Operating temperature range is -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Renesas N0801R-T1-AT technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
SOT-23F
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
2
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
100V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
1A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
25@500mA@2V
Maximum Transition Frequency
80(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Renesas N0801R-T1-AT Datasheet
Download the complete datasheet for Renesas N0801R-T1-AT to view detailed technical specifications.
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