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Technical Specifications
Renesas NE3210S01-T1 technical specifications.
General
| Case Connection | SOURCE |
| Drain Current-Max (Abs) (ID) | 70mA |
| Drain Current-Max (ID) | 15mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | KU BAND |
| JESD-609 Code | e0 |
| Max Operating Temperature | 125°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Style | MICROWAVEMeter |
| Peak Reflow Temperature (Cel) | 230°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 165mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | UNSPECIFIED |
| Time @ Peak Reflow Temperature-Max (s) | 30s |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NE3210S01-T1 Datasheet
Download the complete datasheet for Renesas NE3210S01-T1 to view detailed technical specifications.
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