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Technical Specifications
Renesas NE3509M04-T2-A technical specifications.
General
| Drain Current-Max (ID) | 20mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | S BAND |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NE3509M04-T2-A Datasheet
Download the complete datasheet for Renesas NE3509M04-T2-A to view detailed technical specifications.
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