NPN RF BJT transistor for surface mount applications, featuring a 3-pin Mini-Mold package with gull-wing leads. This silicon component offers a maximum collector-emitter voltage of 5.5V and a maximum DC collector current of 0.2A, with a power dissipation of 480mW. Key performance metrics include a typical transition frequency of 12500MHz, a maximum noise figure of 1.15dB, and a typical 1dB compression point of 21.5dBm. Designed for operation at 5V/40mA, it provides a maximum power gain of 14dB and a typical 3rd order intercept point of 35dBm, operating across a temperature range of -65°C to 150°C.
PackageMini-Mold
MountingSurface Mount
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Technical Specifications
Renesas NESG220033-T1B technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
Mini-Mold
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.3
Seated Plane Height (mm)
1.4
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
5.5V
Maximum Collector Base Voltage
5.5V
Maximum DC Collector Current
0.2A
Maximum Power Dissipation
480mW
Maximum Transition Frequency
12500(Typ)MHz
Maximum Noise Figure
1.15dB
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Maximum Power 1dB Compression
21.5(Typ)dBm
Operational Bias Conditions
5V/40mA
Typical Power Gain
14(Max)dB
Maximum 3rd Order Intercept Point
35(Typ)dBm
Compliance
Cage Code
SAN34
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas NESG220033-T1B Datasheet
Download the complete datasheet for Renesas NESG220033-T1B to view detailed technical specifications.
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