RF NPN BJT transistor, single element, SiGe material, designed for surface mount applications. Features a 4-pin SOT-89 (TO-243-AA) plastic package with flat leads, measuring 4.5mm x 2.5mm x 1.5mm. Operates with a maximum collector-emitter voltage of 5.5V and a maximum DC collector current of 0.2A. Achieves a typical transition frequency of 11.5GHz, a typical noise figure of 1.1dB, and a typical 1dB compression point of 22.5dBm. Supports operational bias conditions of 5V/40mA.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Renesas NESG220034-T1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-243-AA |
| Package/Case | SOT-89 |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.5 |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.5 |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | SiGe |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5.5V |
| Maximum Collector Base Voltage | 5.5V |
| Maximum DC Collector Current | 0.2A |
| Maximum Power Dissipation | 886mW |
| Maximum Junction Ambient Thermal Resistance | 141°C/W |
| Maximum Transition Frequency | 11500(Typ)MHz |
| Maximum Noise Figure | 1.1dB |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Maximum Power 1dB Compression | 22.5(Typ)dBm |
| Operational Bias Conditions | 5V/40mA |
| Typical Power Gain | 12.5(Max)dB |
| Maximum 3rd Order Intercept Point | 35(Typ)dBm |
Compliance
| Cage Code | SAN34 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas NESG220034-T1 Datasheet
Download the complete datasheet for Renesas NESG220034-T1 to view detailed technical specifications.
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