RF NPN BJT transistor for surface mount applications. Features a maximum collector-emitter voltage of 5.5V and a maximum DC collector current of 0.2A. This SiGe transistor offers a typical transition frequency of 11.5GHz and a low noise figure of 1.1dB. Housed in a 4-pin SOT-89 (TO-243-AA) plastic package with flat leads, it supports a maximum power dissipation of 886mW. Operating temperature range is -65°C to 150°C.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Renesas NESG220034-T1-A technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-243-AA
Package/Case
SOT-89
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.5
Package Width (mm)
2.5
Package Height (mm)
1.5
Seated Plane Height (mm)
1.5
Pin Pitch (mm)
1.5
Package Material
Plastic
Mounting
Surface Mount
Material
SiGe
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
5.5V
Maximum Collector Base Voltage
5.5V
Maximum DC Collector Current
0.2A
Maximum Power Dissipation
886mW
Maximum Junction Ambient Thermal Resistance
141°C/W
Maximum Transition Frequency
11500(Typ)MHz
Maximum Noise Figure
1.1dB
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Maximum Power 1dB Compression
22.5(Typ)dBm
Operational Bias Conditions
5V/40mA
Typical Power Gain
12.5(Max)dB
Maximum 3rd Order Intercept Point
35(Typ)dBm
Compliance
Cage Code
SAN34
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas NESG220034-T1-A Datasheet
Download the complete datasheet for Renesas NESG220034-T1-A to view detailed technical specifications.
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