NPN silicon RF transistor designed for amplifier applications. Features a maximum collector-emitter voltage of 9.2V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 80 and a nominal transition frequency (fT) of 10GHz, operating within the ultra-high frequency band. Packaged in a small outline rectangular plastic case with flat, single tin-finished terminals, suitable for surface mounting. Maximum power dissipation is 1.9W, with an operating temperature up to 150°C.
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Technical Specifications
Renesas NESG250134-AZ technical specifications.
General
| Case Connection | EMITTER |
| Collector-emitter Voltage-Max | 9.2V |
| DC Current Gain-Min (hFE) | 80 |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PSSO-F3 |
| JESD-609 Code | e6 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 1.9W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 10GHz |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NESG250134-AZ Datasheet
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