RF NPN BJT transistor in a Super Mini-Mold package, featuring a 4-pin surface mount configuration. This SiGe component offers a maximum collector-emitter voltage of 4.3V and a maximum DC collector current of 0.03A, with a power dissipation of 125mW. Key specifications include a minimum DC current gain of 200 at 5mA/2V, a typical noise figure of 0.75dB, and a 1dB compression point of 4.5dBm. Operating bias conditions are 2V/10mA, with an operational temperature range from -65°C to 150°C.
PackageSuper Mini-Mold
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas NESG7030M04-T2B-A technical specifications.
General
Package Family Name
Super Mini-Mold
Package/Case
Super Mini-Mold
Pin Count
4
PCB
4
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.59
Seated Plane Height (mm)
0.59
Pin Pitch (mm)
1.25
Mounting
Surface Mount
Material
SiGe
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
4.3V
Maximum Collector Base Voltage
10V
Maximum DC Collector Current
0.03A
Maximum Power Dissipation
125mW
Minimum DC Current Gain
200@5mA@2V
Minimum DC Current Gain Range
200 to 300
Maximum Noise Figure
0.75(Typ)dB
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Maximum Power 1dB Compression
4.5(Typ)dBm
Operational Bias Conditions
2V/10mA
Compliance
Cage Code
SAN34
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas NESG7030M04-T2B-A Datasheet
Download the complete datasheet for Renesas NESG7030M04-T2B-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.