Unidirectional silicon transient voltage suppressor diode with a nominal breakdown voltage of 5.6V, ranging from 5.29V to 5.94V. Features avalanche technology and a maximum power dissipation of 200mW, with a non-repetitive peak reverse power dissipation of 85W. Designed for surface mounting in a rectangular, small outline plastic package with gull wing terminals, suitable for reflow temperatures up to 225°C. Operates reliably up to a maximum ambient temperature of 150°C, with tin terminal finish and moisture sensitivity level 1.
PolarityUnidirectional
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Technical Specifications
Renesas NNCD5.6D-T1-A technical specifications.
General
Breakdown Voltage-Nom
5.6V
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR
JESD-30 Code
R-PDSO-G2
JESD-609 Code
e3
Max Breakdown Voltage
5.94V
Min Breakdown Voltage
5.29V
Max Operating Temperature
150°C
Max Power Dissipation
200mW
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
85W
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
225°C
Polarity
Unidirectional
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Technology
AVALANCHE
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Compliance
RoHS
Compliant
Datasheet
Renesas NNCD5.6D-T1-A Datasheet
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