Unidirectional silicon transient voltage suppressor diode with a nominal breakdown voltage of 5.6V, ranging from 5.29V to 5.94V. Features avalanche technology and a maximum power dissipation of 200mW, with a non-repetitive peak reverse power dissipation of 85W. Designed for surface mounting in a rectangular, small outline plastic package with gull wing terminals, suitable for reflow temperatures up to 225°C. Operates reliably up to a maximum ambient temperature of 150°C, with tin terminal finish and moisture sensitivity level 1.
PolarityUnidirectional
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Technical Specifications
Renesas NNCD5.6D-T1-A technical specifications.
General
| Breakdown Voltage-Nom | 5.6V |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR |
| JESD-30 Code | R-PDSO-G2 |
| JESD-609 Code | e3 |
| Max Breakdown Voltage | 5.94V |
| Min Breakdown Voltage | 5.29V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Moisture Sensitivity Level | 1 |
| Non-rep Peak Rev Power Dis-Max | 85W |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 225°C |
| Polarity | Unidirectional |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Technology | AVALANCHE |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NNCD5.6D-T1-A Datasheet
Download the complete datasheet for Renesas NNCD5.6D-T1-A to view detailed technical specifications.
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