The NNCD6.8H is a unidirectional silicon transient voltage suppressor diode with a breakdown voltage range of 6.2 to 7.1V and a maximum non-repetitive peak reverse power dissipation of 85W. It has a maximum operating temperature of 150°C and is available in a 5-pin SC-88A plastic package. The diode element is made of silicon and has a maximum power dissipation of 0.2W.
PolarityUNIDIRECTIONAL
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Technical Specifications
Renesas NNCD6.8H technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Pin Count | 5 |
| Number of Elements | 4 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 6.2 |
| Non-rep Peak Rev Power Dis-Max | 85 |
| Breakdown Voltage-Nom | 6.65 |
| Breakdown Voltage-Max | 7.1 |
| Power Dissipation-Max | 0.2 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Renesas NNCD6.8H Datasheet
Download the complete datasheet for Renesas NNCD6.8H to view detailed technical specifications.
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