P-channel power MOSFET featuring a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A, with a pulsed drain current capability of 300A. Offers a low 3.7mOhm drain-source on-resistance and a maximum operating temperature of 175°C. This single-element silicon MOSFET is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals, designed for switching applications. It boasts a 200W maximum power dissipation and a 550mJ avalanche energy rating.
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Technical Specifications
Renesas NP100P04PLG-E2-AY technical specifications.
General
Avalanche Energy Rating (Eas)
550mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
100A
Drain Current-Max (ID)
100A
Drain-source On Resistance-Max
5.1mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
200W
Pulsed Drain Current-Max (IDM)
300A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP100P04PLG-E2-AY Datasheet
Download the complete datasheet for Renesas NP100P04PLG-E2-AY to view detailed technical specifications.
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