P-channel MOSFET with 60V drain-source breakdown voltage and 100A continuous drain current. Features low 7.8mΩ maximum drain-source on-resistance and 200W maximum power dissipation. Designed for switching applications, this surface-mount component utilizes silicon FET technology and is housed in a TO-263AB package with gull-wing terminals. Operates up to 175°C and offers a 420mJ avalanche energy rating.
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Technical Specifications
Renesas NP100P06PLG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
420mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
100A
Drain Current-Max (ID)
100A
Drain-source On Resistance-Max
7.8mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
200W
Pulsed Drain Current-Max (IDM)
300A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP100P06PLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP100P06PLG-E1-AY to view detailed technical specifications.
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