N-channel single power MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 110A. Boasting a low 2.3mΩ maximum drain-source on-resistance, this component is designed for switching applications. It operates with a maximum power dissipation of 220W and a maximum junction temperature of 175°C. The device utilizes silicon FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals.
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Technical Specifications
Renesas NP109N04PUG-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 110A |
| Drain Current-Max (ID) | 110A |
| Drain-source On Resistance-Max | 2.3mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 220W |
| Pulsed Drain Current-Max (IDM) | 440A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP109N04PUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP109N04PUG-E1-AY to view detailed technical specifications.
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