N-channel single power MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 110A. Boasting a low 2.3mΩ maximum drain-source on-resistance, this component is designed for switching applications. It operates with a maximum power dissipation of 220W and a maximum junction temperature of 175°C. The device utilizes silicon FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals.
Quick Jump:
Technical Specifications
Renesas NP109N04PUG-E1-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
110A
Drain Current-Max (ID)
110A
Drain-source On Resistance-Max
2.3mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
220W
Pulsed Drain Current-Max (IDM)
440A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP109N04PUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP109N04PUG-E1-AY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.