N-channel single power MOSFET featuring a 55V drain-source breakdown voltage and a maximum continuous drain current of 110A. This device offers a low drain-source on-resistance of 3.2mΩ, a maximum power dissipation of 220W, and a pulsed drain current capability of 440A. Designed for switching applications, it utilizes silicon FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. Operating up to 175°C, it includes an avalanche energy rating of 291mJ and is RoHS compliant.
Renesas NP109N055PUJ-E1B-AY technical specifications.
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