N-channel single power MOSFET featuring a 55V drain-source breakdown voltage and a maximum continuous drain current of 110A. This device offers a low drain-source on-resistance of 3.2mΩ, a maximum power dissipation of 220W, and a pulsed drain current capability of 440A. Designed for switching applications, it utilizes silicon FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. Operating up to 175°C, it includes an avalanche energy rating of 291mJ and is RoHS compliant.
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Technical Specifications
Renesas NP109N055PUJ-E1B-AY technical specifications.
General
Avalanche Energy Rating (Eas)
291mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
110A
Drain Current-Max (ID)
110A
Drain-source On Resistance-Max
3.2mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
220W
Pulsed Drain Current-Max (IDM)
440A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP109N055PUJ-E1B-AY Datasheet
Download the complete datasheet for Renesas NP109N055PUJ-E1B-AY to view detailed technical specifications.
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