N-channel single power MOSFET featuring a 55V drain-source breakdown voltage and a maximum continuous drain current of 110A. This device offers a low drain-source on-resistance of 3.2mΩ, a maximum power dissipation of 220W, and a pulsed drain current capability of 440A. Designed for switching applications, it utilizes silicon FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. Operating up to 175°C, it includes an avalanche energy rating of 291mJ and is RoHS compliant.
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Technical Specifications
Renesas NP109N055PUJ-E1B-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 291mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 110A |
| Drain Current-Max (ID) | 110A |
| Drain-source On Resistance-Max | 3.2mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 220W |
| Pulsed Drain Current-Max (IDM) | 440A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP109N055PUJ-E1B-AY Datasheet
Download the complete datasheet for Renesas NP109N055PUJ-E1B-AY to view detailed technical specifications.
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