The NP110N04PUG-E1-AY is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) from Renesas. It can handle a maximum drain current of 110A and a maximum power dissipation of 288W. The device is designed to operate within a temperature range of -40°C to 175°C. It is compliant with RoHS and SVHC regulations, and is suitable for surface mount applications.
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Technical Specifications
Renesas NP110N04PUG-E1-AY technical specifications.
General
| Drain Current-Max (Abs) (ID) | 110A |
| Drain Current-Max (ID) | 110A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 288W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP110N04PUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP110N04PUG-E1-AY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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