P-channel single power MOSFET featuring a -40V drain-source breakdown voltage and a maximum continuous drain current of 15A. This surface-mount device offers a low 60mΩ maximum drain-source on-resistance and a 45A pulsed drain current capability. Designed for switching applications, it operates within a -55°C to +175°C temperature range and is housed in a compact TO-252AA (MP-3ZK) package with gull-wing terminals. The component is RoHS and REACH SVHC compliant.
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Technical Specifications
Renesas NP15P04SLG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
25mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
15A
Drain Current-Max (ID)
15A
Drain-source On Resistance-Max
60mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
30W
Pulsed Drain Current-Max (IDM)
45A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP15P04SLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP15P04SLG-E1-AY to view detailed technical specifications.
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