P-channel MOSFET transistor for switching applications, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 15A, with a pulsed drain current up to 45A. Offers a low drain-source on-resistance of 95mR. Encased in a surface-mount TO-252AA (DPAK) plastic package with gull-wing terminals and a tin finish. Operates up to a maximum temperature of 175°C with a maximum power dissipation of 30W. Compliant with RoHS and REACH SVHC standards.
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Technical Specifications
Renesas NP15P06SLG-E2-AY technical specifications.
General
Avalanche Energy Rating (Eas)
19mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
15A
Drain Current-Max (ID)
15A
Drain-source On Resistance-Max
95mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
30W
Pulsed Drain Current-Max (IDM)
45A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP15P06SLG-E2-AY Datasheet
Download the complete datasheet for Renesas NP15P06SLG-E2-AY to view detailed technical specifications.
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