N-channel single power MOSFET featuring a 40V drain-source breakdown voltage and a maximum continuous drain current of 160A. This component offers a low drain-source on-resistance of 5.4mΩ and a maximum power dissipation of 220W. Designed for switching applications, it operates within a temperature range up to 175°C and is housed in a TO-263 package with gull-wing terminals for surface mounting. It is RoHS compliant and REACH SVHC compliant.
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Technical Specifications
Renesas NP160N04TDG-E1-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 372mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 160A |
| Drain Current-Max (ID) | 160A |
| Drain-source On Resistance-Max | 5.4mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 220W |
| Pulsed Drain Current-Max (IDM) | 640A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP160N04TDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP160N04TDG-E1-AY to view detailed technical specifications.
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