N-channel single power MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 160A (60A absolute maximum). Offers a low 2mΩ drain-source on-resistance and a high pulsed drain current capability of 640A. Designed for switching applications with a maximum operating temperature of 175°C and a maximum power dissipation of 220W. This surface-mount component utilizes a rectangular, small outline package with gull-wing terminals.
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Technical Specifications
Renesas NP160N04TUG-E1-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 372mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain Current-Max (ID) | 160A |
| Drain-source On Resistance-Max | 2mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 220W |
| Pulsed Drain Current-Max (IDM) | 640A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP160N04TUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP160N04TUG-E1-AY to view detailed technical specifications.
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