The NP160N04TUJ-E1-AY is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 160A and on-resistance of 2 milliohms. It has a minimum breakdown voltage of 40V and a maximum power dissipation of 250W. The device is packaged in a rectangular plastic case with a gull wing terminal form and is suitable for switching applications. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
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Technical Specifications
Renesas NP160N04TUJ-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 160A |
| Drain Current-Max (ID) | 160A |
| Drain-source On Resistance-Max | 2mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 250W |
| Pulsed Drain Current-Max (IDM) | 640A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP160N04TUJ-E1-AY Datasheet
Download the complete datasheet for Renesas NP160N04TUJ-E1-AY to view detailed technical specifications.
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