N-channel single power MOSFET featuring a 40V drain-source breakdown voltage and a maximum continuous drain current of 180A. This component offers a low 1.5mΩ drain-source on-resistance and a high pulsed drain current capability of 720A. Designed for switching applications, it operates up to 175°C and has a maximum power dissipation of 288W. The surface-mount rectangular package utilizes gull-wing terminals and is constructed from plastic with tin plating.
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Technical Specifications
Renesas NP180N04TUG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
518mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
180A
Drain Current-Max (ID)
180A
Drain-source On Resistance-Max
1.5mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
288W
Pulsed Drain Current-Max (IDM)
720A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP180N04TUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP180N04TUG-E1-AY to view detailed technical specifications.
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