N-channel single power MOSFET featuring a 40V drain-source breakdown voltage and a maximum continuous drain current of 180A. This component offers a low 1.5mΩ drain-source on-resistance and a high pulsed drain current capability of 720A. Designed for switching applications, it operates up to a maximum temperature of 175°C and has a maximum power dissipation of 288W. The device is housed in a rectangular, surface-mount TO-263 package with gull-wing terminals and is RoHS and REACH SVHC compliant.
Renesas NP180N04TUG-E2-AY technical specifications.
Download the complete datasheet for Renesas NP180N04TUG-E2-AY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.