The NP180N055TUJ-E1-AY is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum operating temperature of 175°C. It features a maximum drain current of 180A and a maximum drain-source on resistance of 2.3mΩ. The device is packaged in a rectangular plastic package with a gull wing terminal form and is suitable for switching applications. The NP180N055TUJ-E1-AY is RoHS compliant and suitable for surface mount.
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Technical Specifications
Renesas NP180N055TUJ-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 180A |
| Drain Current-Max (ID) | 180A |
| Drain-source On Resistance-Max | 2.3mR |
| DS Breakdown Voltage-Min | 55V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 348W |
| Pulsed Drain Current-Max (IDM) | 720A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP180N055TUJ-E1-AY Datasheet
Download the complete datasheet for Renesas NP180N055TUJ-E1-AY to view detailed technical specifications.
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