P-channel single power MOSFET featuring a -60V drain-source breakdown voltage and a maximum continuous drain current of 20A. This device offers a low drain-source on-resistance of 64mΩ, a maximum power dissipation of 38W, and a pulsed drain current capability of 60A. Designed for switching applications, it operates within a temperature range up to 175°C and is housed in a TO-252AA (small outline) package with gull-wing terminals for surface mounting. The MOSFET is RoHS and REACH SVHC compliant.
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Technical Specifications
Renesas NP20P06SLG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
28mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
20A
Drain Current-Max (ID)
20A
Drain-source On Resistance-Max
64mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
38W
Pulsed Drain Current-Max (IDM)
60A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP20P06SLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP20P06SLG-E1-AY to view detailed technical specifications.
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