N-channel power MOSFET, 55V drain-source voltage, 32A continuous drain current, and 24mOhm maximum drain-source resistance at 10V. Features a single element configuration with an enhancement mode channel, housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads. Operating temperature range from -55°C to 175°C, with a maximum power dissipation of 1200mW.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Renesas NP32N055SDE technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
6.1
Package Height (mm)
2.3
Seated Plane Height (mm)
2.65(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
55V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
32A
Maximum Drain Source Resistance
24@10VmOhm
Typical Gate Charge @ Vgs
15@5V|27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
1300@25VpF
Maximum Power Dissipation
1200mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
SAN34
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas NP32N055SDE Datasheet
Download the complete datasheet for Renesas NP32N055SDE to view detailed technical specifications.
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