N-channel power MOSFET, 55V drain-source voltage, 32A continuous drain current, and 24mOhm maximum drain-source resistance at 10V. Features a single element configuration with an enhancement mode channel, housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads. Operating temperature range from -55°C to 175°C, with a maximum power dissipation of 1200mW.
Renesas NP32N055SDE technical specifications.
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