This N-Channel MOSFET has a maximum drain current of 32A and a maximum power dissipation of 66W. It operates at temperatures up to 175°C and is designed for surface mount applications. The device is RoHS compliant and features metal-oxide semiconductor technology.
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Technical Specifications
Renesas NP32N055SDE-E1-AY technical specifications.
General
| Drain Current-Max (Abs) (ID) | 32A |
| Drain Current-Max (ID) | 32A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 66W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP32N055SDE-E1-AY Datasheet
Download the complete datasheet for Renesas NP32N055SDE-E1-AY to view detailed technical specifications.
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