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Technical Specifications
Renesas NP35N04YUG-E1-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
35A
Drain Current-Max (ID)
35A
Drain-source On Resistance-Max
10mR
DS Breakdown Voltage-Min
40V
Feedback Cap-Max (Crss)
220pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
77W
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP35N04YUG-E1-AY Datasheet
Download the complete datasheet for Renesas NP35N04YUG-E1-AY to view detailed technical specifications.
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