P-channel MOSFET with a 40V drain-source breakdown voltage and a maximum continuous drain current of 36A. Features a low on-resistance of 23.5mR, a pulsed drain current of 108A, and a maximum power dissipation of 56W. Designed for switching applications with a 175°C maximum operating temperature and a TO-263AB package. Avalanche energy rating is 72mJ.
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Technical Specifications
Renesas NP36P04KDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
72mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
36A
Drain Current-Max (ID)
36A
Drain-source On Resistance-Max
23.5mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
56W
Pulsed Drain Current-Max (IDM)
108A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP36P04KDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP36P04KDG-E1-AY to view detailed technical specifications.
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