P-channel MOSFET for switching applications, featuring a -40V drain-source breakdown voltage and a maximum continuous drain current of 36A. Offers a low on-resistance of 23.5mΩ at a 10V gate-source voltage. This single-element silicon transistor is housed in a TO-252 (R-PSSO-G2) small outline package with gull wing terminals, suitable for surface mounting. It operates up to 175°C and is AEC-Q101 qualified, with a 56W maximum power dissipation.
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Technical Specifications
Renesas NP36P04SDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
67mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
36A
Drain Current-Max (ID)
36A
Drain-source On Resistance-Max
23.5mR
DS Breakdown Voltage-Min
40V
Feedback Cap-Max (Crss)
280pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
1.2W
Power Dissipation-Max (Abs)
56W
Pulsed Drain Current-Max (IDM)
108A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
Reference Standard
AEC-Q101
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP36P04SDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP36P04SDG-E1-AY to view detailed technical specifications.
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